Showing 81–96 of 131 results
IRFP27N60K is a type of MOSFET its also known as Power MOSFET which is basically designed to work as switch its a switching device its mostly used in power switching circuit. Its a three terminal device its maximum reverse operating voltage is 600V, It operates on low gate charge in result of simple drive requirement….
The IR MOSFET family of Power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including battery-powered devices, DC motors, inverters, SMPS, lighting, load switches, and illumination. This feature offers the designer a highly effective and dependable device for usage in a range of applications,…
The IR MOSFET family of Power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including battery-powered devices, DC motors, inverters, SMPS, lighting, load switches, and illumination. This feature offers the designer a highly effective and dependable device for usage in a range of applications,…
The N-channel Enhanced mode field-effect power transistor is used in motor control circuits, general purpose switching applications, T.V. and computer monitor power supplies, off-line switched mode power supplies, and DC to DC converters.The SOT429 (TO247) conventional leaded package contains the IRFP460.Features include repeating avalanches. Rated: High thermal cycling performance; Fast switching; Stable off-state features; Low…
IRFZ34N International Rectifier’s Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. Ultra Low…
IRFZ44 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 94 W. The…
IRGPC50U is an IGBT MOSFET which is mostly known for its ultrafast feature. Its operating current is 27A, and the voltage is 600V. It has a soft recovery time just because of this feature; it performs fast switching operations. Its primarily used in SMPS, UPS, inverters and other general switching applications. Features: Fast Switching Speed…
IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. IRF Mosfets need…
The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications. The ISL83202, which is optimized for PWM motor control and uninterruptible power supply systems, offers simple and flexible bridge-based design. The ISL83202 is excellent for switching…
IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It’s used to switch the power in circuitry. It’s used to protect the circuit from high power too. Its drain-source voltage is 250V. Its drain current is 25A. It’s a space-saving device and easy to mount. DATASHEET Applications: SMPS UPS…
IXYS IXFX44N80P is a three-terminal N-Channel Power MOSFET, It features an avalanche-rated and fast intrinsic diode. Its Voltage rating is 800V, its Current rating is 44A and its Driving voltage is 10V. Advantages: Easy to Mount Space Saving High Power Density Features: International Standard Packages Fast Intrinsic Diode Avalanche Rated Low Package Inductance Datasheet Specification Model…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…
The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…