Showing 65–80 of 131 results
IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Features It has 100% avalanche rated It has Fast switching system Ease of paralleling New high…
IRF640 is a type of power MOSFET. It’s also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device. It’s used to switch the power that’s why it’s known as the power-switching MOSFET. Its drain-source voltage is 200V. And its drain current is 18A. Features…
IRF640A is a type of power MOSFET. It’s also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device. It’s used to switch the power that’s why it’s known as the power-switching MOSFET. Its drain-source voltage is 200V. And its drain current is 18A. DATASHEET…
An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility…
An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility…
IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for…
These IRFF9Z34N Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide…
An N-Channel MOSFET creates a current channel by using electrons. Electrons can move fast and readily via the current when the MOSFET is active and switched on. Because of the unique features of N-Channel MOSFETs, carrier mobility is approximately 2 to 3 times that of a P-channel for the same RDS(on) value, hence the P-Channel…
An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must…
An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must…
IRFB4310 is a power MOSFET. As we already know, the power MOSFET is designed to handle high levels of power. These MOSFETS perform significantly better than standard MOSFETs in the lower voltage range, thanks to their rapid switching. It operates on the same principles as standard MOSFETs. It’s used in rectification circuits, SMPS (switch mode power…
IRFB7537 is a power MOSFET. Its operating voltage is 60V its drain current is 173A. Its maximum power dissipation is 375W. It’s a three-terminal device Gate drain and source. DATASHEET Applications: Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and…
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of…
IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition to the quick switching speed and rugged design that IR MOSFETTM devices are renowned for. Features: Advanced Process Technology Dynamic dv/DT Rating 175°C Operating Temperature Fast…
International Rectifier’s Fifth Generation HEXFETs employ cutting-edge manufacturing techniques to produce extraordinarily low on-resistance per silicon area. This feature gives the designer an exceptionally efficient and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. For commercial…
IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. …