Showing 49–64 of 131 results
FQP10N80C is an N channel MOSFET which is basically used for fast switching operation its maximum operating voltage is 800V. These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary, planar stripe, DMOS technology developed by Fairchild. With this cutting-edge technology, high energy pulses can be withstood in the avalanche and commutation…
FQPF4N80 2A,800V N-CHANNEL enhancement mode power field effect transistors were created the exclusive planar stripe DMOS process developed by Fairchild.In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. The high efficiency switch mode power supply is ideal for these…
FQPF8N80C is a type of N- channel MOSFET its used in fast switching operation its maximum operating voltage is 800V. This component is best for high efficiency switch mode power supplies. Its maximum lead temperature for soldering purpose is 300 °C. Its reverse recovery time is 690nS that is why it mostly used in fast switching operations….
G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V. Applications Telecommunications – Server and telecom power supplies Lighting – High-intensity discharge (HID) – Light emitting diodes…
G4PC50U is an IGBT MOSFET which is mostly known for its ultrafast feature.¬† Its operating current is 27A, and the voltage is 600V. It has a soft recovery time just because of this feature; it performs fast switching operations. Its primarily used in¬† SMPS, UPS, inverters and other general switching applications. Features: Fast Switching Speed…
This GP4063D is an INSULATED BIPOLAR GATE TRANSISTOR MOSFET. GP4063D is a type of MOSFET which has three terminal emitters, a collector and a gate. It’s used as an electronic switch; It is suitable for high voltage, high current and fast switching. Its also known as an insulated bipolar gate transistor. by using this transistor…
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Features New revolutionary high voltage technology Worldwide best RDS(on) in…
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics. Features New revolutionary high voltage technology Ultra-low gate charge Periodic…
Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50 W, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220’s low heat resistance and low packaging cost contribute to its widespread…
Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50 W, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220’s low heat resistance and low packaging cost contribute to its widespread…
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Features Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully…
The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Features Improved gate, avalanche and dynamic dv/dt ruggedness Fully…
The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Features Improved gate, avalanche and dynamic dv/dt ruggedness Fully…
The IRFB7545PBF is an N-channel HEXFET Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It is appropriate for battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and so on. Features Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode…
The IRFB7545PBF is an N-channel HEXFET Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It is appropriate for battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and so on. Features Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterised capacitance and avalanche SOA Enhanced body diode…
IRF530N is an N Channel Power MOSFET which is used to switch the power in power supply circuits, It has designed by the International rectifier. It has three terminal basically gate drain and source, here the gate is working as a gateway means it will allow to pass the electrons from the source, and drain…