Showing 1–16 of 205 results
13007A STMicroelectronics is an NPN Switching Transistor designed for high voltage, high speed, power switching in an inductive circuit. The MJE13007A is a silicon multi-epitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are frequently used in motor control, switching regulators, and other applications. Datasheet Features High Current capacity High-speed switching Wide SOA Applications…
Its 150N10F7 Power MOSFET which is basically designed for the use in power switching applications and many other switching applications like in SMPS, UPS, Inverter, Snubber, free wheeling etc. Its voltage is 100V and the current is 110A. DATASHEET Features: Among the lowest RDS(on) on the market Excellent figure of merit Low Cr0ss/Ciss ratio for…
A high voltage switching device with MOS gate that combines the finest qualities of MOSFETs and bipolar transistors is called 20N60A4D. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25 and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The…
This is a 20N60BFD HiPerFAST IGBT Field-Effect Transistor (MOSFET) in TO-3P Package. The 20N60 is a power MOSFET with an N-channel enhancement mode. The 20N60 is used in various applications, including motor control, UPS, DC choppers, and switch-mode and resonant-mode power supplies. Applications DC chopper Servo motor drivers AC motor control speed Uninterruptible Power Supply (UPS) Switch mode power…
20N60S5 is a power transistor. As we know that power transistors are used for power switching. A three-terminal device known as a power transistor is made of semiconductor materials. It has collector, base, and emitter terminals. This component is specially made to handle high current-voltage ratings. Regular transistors are usually used for amplifying and switching…
23N50E is an N-Channel silicon power MOSFET used to switch the power. It’s also known as an electronic switch. It’s used in a switching regulator, UPS, SMPS, snubber and other general switching applications. Features Lower RDS(on) characteristic More controllable switching dv/DT by gate resistance Smaller VGSringing waveform during switching A narrow band of the gate…
The 2N2222 is an NPN bipolar junction transistor (BJT). Its used in low-power amplifying and switching applications. It is intended for low to medium current, low power, medium voltage, and relatively fast operation. Features: Its bipolar NPN transistor Its current gain is 300hFE Its collector current is 800mA Its emitter base voltage is 6V Specifications…
2N2907A is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the…
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Features: Its NPN transistor Its used in switching applications Its package is TO-92 Its…
Its PNP transistor, The PNP transistor is a type of transistor in which one n-type material is doped with two p-type materials. It is a device that is controlled by the current. Both the emitter and collector currents were controlled by the small amount of base current. Features Its used in portable radios Its mounting style is…
The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Features: Small signal N-Channel MOSFET. Drain-Source Voltage (VDS) is 60V. Continuous Drain Current (ID) is 200mA. Pulsed Drain Current…
30F60S1 is an N channel Enhancement mode power MOSFET which is used to switch the power and It’s used to control the circuit. It’s used to protect the circuit from overvoltage. Its operating voltage is 600V, and There are huge applications of power MOSFET in SMPS and UPS. Snubber, free-wheeling diode and general switching applications. DATASHEET…
The MDmesh M2 technology was used to create these N-channel Power MOSFETs(33N60M2 ). These devices have low on-resistance and optimum switching properties because of their strip layout and an improved vertical structure, making them suited for the most demanding high-efficiency converters. Datasheet Features It’s a Zener-protected device It’s used as a switching device Its 100% avalanche…
35N60C3 is a power transistor which is mainly used in power-switching applications. It’s used for fast switching applications like SMPS, UPS, Inverter and other general switching applications. Its drain-source voltage is 650V, and its drain current is 34.6A. Features High-speed switching Avalanche energy rated (UIS) New revolutionary high-voltage technology Ultra low gate charge Periodic avalanche rated…
50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These components are ideal for low-voltage uses, including…
The Fairchild Power Switch(FPS) product series was created specifically. A high voltage power SenseFET and a current mode PWM IC make up the Fairchild Power Switch (FPS). The fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimised gate turn-on/turn-off driver, the over-voltage protection, and the temperature-compensated precision current sources are all…