Showing 4113–4128 of 5526 results
IRGPC50U is an IGBT MOSFET which is mostly known for its ultrafast feature. Its operating current is 27A, and the voltage is 600V. It has a soft recovery time just because of this feature; it performs fast switching operations. Its primarily used in SMPS, UPS, inverters and other general switching applications. Features: Fast Switching Speed…
IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. IRF Mosfets need…
The IS32LT3177 and IS32LT3178 are temperature-stable adjustable linear current devices. To configure‚ only one resistor is necessary. The operating current can range between 10mA and 200mA. The devices can function from 2.9V to 40V input voltage with a minimum voltage headroom of 1.0V (Typ.) at 150mA. The device has a low dropout voltage and can…
ISD1820 Voice Recording module can be used for multi-segment recording. The mic is present on board and there is two pins (SP+ and SP-) present onboard to connect the speaker. Other than Speaker output pins there are 6 more pins on the ISD1820 module i.e., Vcc, GND, FT, REC, PE and PL. Vcc and GND…
The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications. The ISL83202, which is optimized for PWM motor control and uninterruptible power supply systems, offers simple and flexible bridge-based design. The ISL83202 is excellent for switching…
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…
IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It’s used to switch the power in circuitry. It’s used to protect the circuit from high power too. Its drain-source voltage is 250V. Its drain current is 25A. It’s a space-saving device and easy to mount. DATASHEET Applications: SMPS UPS…
IXYS IXFX44N80P is a three-terminal N-Channel Power MOSFET, It features an avalanche-rated and fast intrinsic diode. Its Voltage rating is 800V, its Current rating is 44A and its Driving voltage is 10V. Advantages: Easy to Mount Space Saving High Power Density Features: International Standard Packages Fast Intrinsic Diode Avalanche Rated Low Package Inductance Datasheet Specification Model…
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…
The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…