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Synchronous Step-Down DC/DC Converter is a type of DC-DC converter which provides an output regulated voltage that is lower than its input voltage. The FR9887 is a 340KHz Synchronous Step-Down DC/DC Converter. The typical applications of this device are Set-Top-Box, LCD Display (TV), Distributed Power System, Networking, and XDSL Modem.
An IR LED 3 mm transmits infrared rays in the range of 760 nm wavelength. It is made of gallium arsenide or aluminum gallium arsenide. Features Energy-efficient. Environmentally friendly. Zero maintenance. Safety. Long-life from 50000 hrs to 100000 hrs. High reliability High radiant intensity 2.54mm Lead spacing Low forward voltage Applications IR Touch-Panel Industrial equipment Suitable to…
An IR LED 5 mm transmits infrared rays in the range of 760 nm wavelength. It is made of gallium arsenide or aluminium gallium arsenide. It has high radiant intensity and high reliability. Features Energy-efficient. Environmentally friendly. Zero maintenance. Safety. Long-life from 50000 hrs to 100000 hrs. High reliability High radiant intensity 2.54 mm Lead…
IR Proximity Sensor module uses infrared rays to detect obstacles in the range of 2-10 CM. It has 3 pins i.e., Vcc, GND and Out. Operating current of this module is 5V DC hence 5V is supplied to the Vcc. GND is connected to the ground of the system. Out pin gives an active high…
IR Receiver LED as the name suggests is used to detect Infrared Rays. IR Receiver LED is a photodiode that has a cathode and an anode similar to the normal LED. IR Receiver has two leads the shorter one is a cathode and the longer one is an anode. An anode is the positive pin…
IR Receiver LED as the name suggests is used to detect Infrared Rays. IR Receiver LED is a photodiode that has a cathode and an anode similar to the normal LED. IR Receiver has two leads the shorter one is a cathode and the longer one is an anode. An anode is the positive pin…
You can use IR Sensor Light Switch (Auto On/Off on Door Opening and Closing) in wardrobes, cabinets, rooms, and other places. It is a short distance IR sensor. The sensor detects an obstacle in range. If anything is present within range (around 5-6cm), Lights gets turned off until the door is closed or the obstacle…
IRF530N is an N Channel Power MOSFET which is used to switch the power in power supply circuits, It has designed by the International rectifier. It has three terminal basically gate drain and source, here the gate is working as a gateway means it will allow to pass the electrons from the source, and drain…
IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Features It has 100% avalanche rated It has Fast switching system Ease of paralleling New high…
IRF640 is a type of power MOSFET. It’s also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device. It’s used to switch the power that’s why it’s known as the power-switching MOSFET. Its drain-source voltage is 200V. And its drain current is 18A. Features…
IRF640A is a type of power MOSFET. It’s also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device. It’s used to switch the power that’s why it’s known as the power-switching MOSFET. Its drain-source voltage is 200V. And its drain current is 18A. DATASHEET…
An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility…
An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility…
IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for…
These IRFF9Z34N Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide…
An N-Channel MOSFET creates a current channel by using electrons. Electrons can move fast and readily via the current when the MOSFET is active and switched on. Because of the unique features of N-Channel MOSFETs, carrier mobility is approximately 2 to 3 times that of a P-channel for the same RDS(on) value, hence the P-Channel…