IRL520 N-channel 100V 10A Mosfet

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Description

IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. IRF Mosfets need 10V at the gate to fully turn on. IRL Mosfets need 5V at the gate to fully turn on.
Features:
  • Its N-Channel MOSFET
  • Its used for Switching application
  • Its Package is TO-220
  • Its Power dissipation is 60W
Specification
Part Number IRL520 
Type of Control Channel N-Channel
Maximum Power Dissipation 60W
Maximum Drain Source Voltage 100V
Maximum Gate Source Voltage 10V
Maximum Gate Threshold Voltage 2V
Maximum Drain Current  9.2A
Maximum Junction Temperature 175°C
Rise Time 64nS
Drain Source Capacitance 150 pF
Maximum Drain Source ON state Resistance 0.27 ohm
Country of Origin China