G33N50EF Power MOSFET with Fast Body Diode

Description

G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V.

Applications

•  Telecommunications – Server and telecom power supplies 
• Lighting – High-intensity discharge (HID) – Light emitting diodes (LEDs) 
• Consumer and computing – ATX power supplies 
• Industrial – Welding – Battery chargers
• Renewable energy – Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies – LLC – Phase shifted bridge (ZVS) – 3-level inverter – AC/DC bridge

Features

• High-speed switching Low input capacitance (Ciss)
• Low on-resistance
• No secondary breakdown
• Low driving power
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)

Specification