Showing 113–128 of 131 results
S7N80A is an N-Channel Power MOSFET. A power MOSFET is used in the power circuit to switch the power. It’s used for high power; it’s used in SMPS, UPS, Inverter, Snubber, welder and other general switching applications. Its Drain Current is 4A at 25 degrees centigrade. Features: Its drain current is 4A Its drain-source voltage…
Vishay’s SI2301 is a P Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has ±8 VDC Gate to Source Voltage and a Drain Current of 1.5 to 2.3 A. Features: Its P-Channel MOSFET Its used in Switching application Its…
Vishay’s SI2302 is an N Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a Drain Current of 2.2 to 2.8 A. Datasheet Features: Its N-Channel MOSFET Its SOT-23 Its SMD…
STP55NF06 power MOSFETs have been developed using STMicroelectronics’ unique ‘Single Feature Size’ strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics that make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters…
STP55NF06 power MOSFETs have been developed using STMicroelectronics’ unique ‘Single Feature Size’ strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics that make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters…
SW20N65C is a power MOSFET it has designed by using the advanced power MOSFET designing technology. Its basically designed has to used in power supply switching circuits, As its name is showing that this MOSFET will manage the power or control the power. Power MOSFET is a type of metal oxide semiconductor field-effect transistor used to switch…
TK12A600 is a N-Channel MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. Features Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA…
TOP Switch-GX uses the same proven topology as TOPSwitch, cost-effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry onto a single CMOS chip. Many new features have been included to lower system costs while also improving design flexibility, performance, and energy efficiency. It has the following transparent characteristics: Soft start,…
2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions…
2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions…
The K2611 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…
This line of integrated circuit voltage regulators with fixed voltage is made for various uses. Among these uses is on-card regulation, which reduces noise and the distribution issues brought on by single-point regulation. These regulators each have an output current capacity of 1.5 A. These regulators are impervious to overload because of their inbuilt current-limiting…
The UTC8N80 is an N-channel mode power MOSFET that offers customers DMOS and planar stripe technology by utilising UTC’s cutting-edge technology. This innovation permits a minimum enhanced switching performance with low on-state resistance. It can also tolerate large energy pulses in the avalanche and commutation modes.Typically, a high-efficiency switch mode power supply uses the UTC…
Vishay’s third-generation Power MOSFETs offer the optimum combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater…
Vishay’s SI2301 is a P Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a 1.5 to 2.3A Drain Current. Specification Model SI2301 Brand VISHAY Drain-Source Voltage (VDS) 20V Gate-Source Voltage…
Vishay’s SI2301 is a P Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a 1.5 to 2.3A Drain Current. Specification Model SI2301 Brand VISHAY Drain-Source Voltage (VDS) -20V Gate-Source Voltage…