Showing 97–112 of 131 results
K4202 is an N channel MOSFET which is basically used for switching applications its an electronic switch where we have no need of manual touch for switching its junction temperature is 175 degree centigrade its package is TO-220AB. There is the wide application of this device its used in power switching circuit, its used in…
A Link Switch-HP device monolithically integrates a controller and high-voltage power MOSFET into one package.. It contains a newly created analogue control system that provides primary-side regulated (PSR), continuous conduction mode (CCM), power supply up to 90 W without the efficiency restriction of DCM or audible noise. With the ability to operate in several modes,…
A LinkSwitch-HP device monolithically integrates a controller and high-voltage power MOSFET into one package.. It contains a newly created analogue control system that provides primary-side regulated (PSR), continuous conduction mode (CCM), power supply up to 90 W without the efficiency restriction of DCM or audible noise. With the ability to operate in several modes, it…
LTTH806SD is a fast recovery diode; it’s used for fast switching operations, it has a fast recovery time, and this feature makes it too fast to operate as a switch. It’s an electronic switch there is no need for any mechanical movement for switching it operates with the help of an electric signal. Features: General…
These N-channel MOSFETs are created using cutting-edge Magna Chip MOSFET Technology, which offers exceptional quality, strong switching performance, and low on state resistance. These devices are appropriate for general-purpose, high-speed switching, and SMPS applications. This drain current is 7.0 A its mostly used in switching operation wherever we need of fast switching there we can…
MJE15033 is a complementary silicon MOSFET which is used as an electronic switch. It’s a switching device which is used to switch the power. There are many applications of this MOSFET like SMPS, UPS, Inverter, Welder and other switching applications. Its max operating voltage is 250V, and the current is 8A. Features DC Current Gain…
The MSF8N80 is an N-channel enhancement-mode MOSFET that provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The majority of electrons are found in the N-Channel, and their movement in the channel is responsible for the flow of current in the transistor. The ITO-220AB package is widely…
ST’s well-known strip-based PowerMESHTM layout is highly optimised to create the SuperMESHTM series. Besides significantly reducing on-resistance, extra care is taken to guarantee excellent dv/dt capability for the most demanding applications. Such a series completes ST’s high-voltage MOSFETs, including the ground-breaking MDmeshTM devices. Applications: It’s used for high current It’s used for high-switching applications It’s…
The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications. However, a driver circuit is needed if the MOSFET has to be switched…
P75NF758 is an N channel power MOSFET its maximum operating voltage is 75V and the forward current is 80A.This Power MOSFET series was created using STMicroelectronics’ exclusive S Trip FET process, and it was specifically created to reduce gate charge and input capacitance. In modern, high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications,…
P80NF55 power MOSFETs were created utilising STMicroelectronics’ proprietary STripFET technology, which is especially engineered to decrease input capacitance and gate charge. As a result, the devices are suited for usage as the main switch in sophisticated high-efficiency isolated DCDC converters for telecom and computer applications, as well as applications with low gate charge driving requirements….
This Power MOSFET is the most recent improvement of STMicroelectronics’ distinctive strip-based ‘single feature size’ technique. The resultant transistor has outstanding manufacturing reproducibility because of its rugged avalanche features, extremely high packing density for low on-resistance, and minimally critical alignment stages. DATASHEET Features Low Power Loss High-Efficiency High Current Capability Low Forward Voltage Drop Avalanche…
PHP34NQ11T is an N-Channel enhancement MOSFET. It’s used in switching applications. It’s an electronic switch. Wherever we do not need a mechanical switch, we use this switch because it performs its switching operation by electricity instead of mechanical movement. Its package is TO-220AB. Features Low on State resistance It has a low thermal resistance It’s…
R30120G2¬†This device is designed to be used as a boost or free-wheeling diode in power supply and other power-switching applications. The short ta phase and low IRR minimize loss in switching transistors. The smooth recovery reduces ringing and increases the range of operating conditions for the diode without the need for extra snubber circuitry. For…
2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than that of the general transistor. The Drain and Source are connected when a signal is applied to the Gate terminal, as with most of the MOSFETs….
2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than that of the general transistor. The Drain and Source are connected when a signal is applied to the Gate terminal, as with most of the MOSFETs….