Showing 33–48 of 131 results
This N-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications. Features： 1) VDS=60V, ID=50A, RDS(ON)<17mΩ @VGS=10V 2) Low gate charge 3) Green device available 4) Advanced high cell density trench technology for ultra RDS(ON) 5) Excellent…
This N-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications Features： 1) VDS=60V, ID=50A, RDS(ON)<17mΩ @VGS=10V 2) Low gate charge 3) Green device available 4) Advanced high cell density trench technology for ultra RDS(ON) 5) Excellent…
This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications. Features： 1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V 2) Low gate charge 3) Green device available 4) Advanced high cell density trench technology for ultra RDS(ON) 5) Excellent…
20N50 is an N- Channel MOSFET. It’s a three-terminal silicon device, and the current capability is 20A it is used in fast switching operations its breakdown voltage rating is 500V, and the threshold voltage is 5V. They are intended for motor control circuits, UPS, switched-mode power supplies, DC-to-DC converters, and general switching applications. The Nell 20N50…
A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. SuperFET II MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss,…
A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. SuperFET II MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction…
FAIRCHILD FDA28N50 is an N-Channel 500V, 28A MOSFET. It is a Through-hole(THD) active component which consists of three terminals Gate, Source, and Drain. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features RDS(on)= 0.122Ω( Typ.)@ VGS= 10V, ID= 14A Low Gate Charge (Typ. 80nC) Low Crss (Typ….
The SuperFET® II MOSFET is a new high voltage super-junction (SJ) MOSFET family from Fairchild Semiconductor that uses charge balance technology for exceptional low on-resistance and lower gate charge performance. This technology minimises conduction loss while switching performance, dv/dt rate and avalanche energy are all improved. As a result, SuperFET II MOSFET is ideal for…
The Super MOS® MOSFET is next-generation high voltage super-junction (SJ) technology. It differs from traditional SJ MOSFETs in that it uses a deep trench filling technique. Lowest R s p on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC,…
These N-Channel enhancement mode power field effect transistors are created using a proprietary planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction…
FDA59N30 is an N-Channel enhancement mode This N-Channel enhancement mode power field effect transistor is made utilizing a planar stripe, DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are…
FDA69N30 is a type of MOSFET which is basically designed by the use of DMOS technology its used in switching applications its operating voltage is 300V and the current is 59A. its used for high switching applications like in SMPS( switch mode power supply) and in UPS ( Uninterrupted power supply) This MOSFET is designed…
FQA24N50 is an N-Channel enhancement mode MOSFET which is basically used in switching applications, Its operating voltage is 500V its mostly used for high switching application and power switching, SMPS, UPS and other switching applications its package is TO-3P its designed by Fairchild. Its forward current is 5A and low gate charge is typically 90nC….
FQA24N60 is a N-Channel Enhancement mode metal oxide field effect transistor its basically used for switching purpose its used for high switching and power switching applications, Its operating voltage is 600V, its forward current is 23.5A, it provides superior switching performance that is why its mostly used in switching applications like in SMPS, UPS, Power…
The proprietary planar stripe and DMOS technology of Fairchild Semiconductor is used to manufacture this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically tailored to provide superior switching performance, high avalanche energy strength, and lower on-state resistance. Switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts can…
This N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These gadgets are appropriate for applications requiring variable switching power, DC motor control, and switched-mode power sources. Features: 70 A, 100 V, RDS(on) = 23 mΩ…