Showing 1–16 of 131 results
Its 150N10F7 Power MOSFET which is basically designed for the use in power switching applications and many other switching applications like in SMPS, UPS, Inverter, Snubber, free wheeling etc. Its voltage is 100V and the current is 110A. DATASHEET Features: Among the lowest RDS(on) on the market Excellent figure of merit Low Cr0ss/Ciss ratio for…
A high voltage switching device with MOS gate that combines the finest qualities of MOSFETs and bipolar transistors is called 20N60A4D. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25 and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The…
This is a 20N60BFD HiPerFAST IGBT Field-Effect Transistor (MOSFET) in TO-3P Package. The 20N60 is a power MOSFET with an N-channel enhancement mode. The 20N60 is used in various applications, including motor control, UPS, DC choppers, and switch-mode and resonant-mode power supplies. Applications DC chopper Servo motor drivers AC motor control speed Uninterruptible Power Supply (UPS) Switch mode power…
23N50E is an N-Channel silicon power MOSFET used to switch the power. It’s also known as an electronic switch. It’s used in a switching regulator, UPS, SMPS, snubber and other general switching applications. Features Lower RDS(on) characteristic More controllable switching dv/DT by gate resistance Smaller VGSringing waveform during switching A narrow band of the gate…
The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Features: Small signal N-Channel MOSFET. Drain-Source Voltage (VDS) is 60V. Continuous Drain Current (ID) is 200mA. Pulsed Drain Current…
30F60S1 is an N channel Enhancement mode power MOSFET which is used to switch the power and It’s used to control the circuit. It’s used to protect the circuit from overvoltage. Its operating voltage is 600V, and There are huge applications of power MOSFET in SMPS and UPS. Snubber, free-wheeling diode and general switching applications. DATASHEET…
The MDmesh M2 technology was used to create these N-channel Power MOSFETs(33N60M2 ). These devices have low on-resistance and optimum switching properties because of their strip layout and an improved vertical structure, making them suited for the most demanding high-efficiency converters. Datasheet Features It’s a Zener-protected device It’s used as a switching device Its 100% avalanche…
35N60C3 is a power transistor which is mainly used in power-switching applications. It’s used for fast switching applications like SMPS, UPS, Inverter and other general switching applications. Its drain-source voltage is 650V, and its drain current is 34.6A. Features High-speed switching Avalanche energy rated (UIS) New revolutionary high-voltage technology Ultra low gate charge Periodic avalanche rated…
50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These components are ideal for low-voltage uses, including…
The Fairchild Power Switch(FPS) product series was created specifically. A high voltage power SenseFET and a current mode PWM IC make up the Fairchild Power Switch (FPS). The fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimised gate turn-on/turn-off driver, the over-voltage protection, and the temperature-compensated precision current sources are all…
STP80NF70 is an N-Channel Power MOSFET. It has specifically been designed to minimize input capacitance and gate charge. The majority of electronic carriers that move in the channel are accountable for the flow of current by applying a signal to the gate that controls current conduction between source and drain. It is a through hole active…
95N4F3 is an N-Channel enhancement mode power transistor, and Power transistors are three-terminal devices composed of semiconductor materials. They feature emitter, base and collector terminals. These devices are mainly designed to control high current–voltage ratings. Its drain-source voltage is 40V, and the forward current is 80A. Applications: SMPS( Switch mode power supply) UPS(Uninterrupted Power supply) Welder…
The AO3401 P-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is appropriate for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) < 50mΩ (VGS…
The AO3401 P-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is appropriate for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) < 50mΩ (VGS…
The AO3402 30V 4A N-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is appropriate for use as a load switch or in PWM applications. Datasheet Specification Model AO3402 Brand Alpha & Omega Drain-Source Voltage (VDS) 30V Gate-Source…
The AO3402 30V 4A N-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is appropriate for use as a load switch or in PWM applications. Datasheet Specification Model AO3402 Brand Alpha & Omega Drain-Source Voltage (VDS) 30V Gate-Source…