Showing 33–48 of 49 results
RJP4009 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlight of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4009ANS Brand Renesas Package VSON-8…
RJP4009 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlight of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4009ANS Brand Renesas Package VSON-8…
The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It isintended for power switching circuits and general-purpose amplifiers. The complementary. Datasheet Features Complementary to the MJE3055T Well-controlled hFE parameter for increased reliability Specifications Model MJE2955T Brand STMicroelectronics Material Silicon Polarity PNP Max. Collector power Dissipation 75W Max. Collector-Base Voltage 70V Max. Collector-Emitter Voltage 60V…
The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It isintended for power switching circuits and general-purpose amplifiers. The complementary Datasheet Features Complementary to the MJE3055T Well-controlled hFE parameter for increased reliability Specifications Model MJE2955T Brand STMicroelectronics Material Silicon Polarity PNP Max. Collector power Dissipation 75W Max. Collector-Base Voltage 70V Max. Collector-Emitter Voltage 60V…
The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is for power switching circuits intended for general-purpose amplifiers. The complementary PNP type is MJE2955T. Features: DC Current Gain Specified to 10 Amperes High Current Gain — Bandwidth Product —fT = 2.0 MHz (Min) @ IC = 500 mAdc Specifications Model MJE3055T…
The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is for power switching circuits intended for general-purpose amplifiers. The complementary PNP type is MJE2955T. Features: DC Current Gain Specified to 10 Amperes High Current Gain — Bandwidth Product —fT = 2.0 MHz (Min) @ IC = 500 mAdc Specifications Model MJE3055T…
Its TIP122 NPN Power Darlington Transistor 100V 5A TO-220 Package, Based on its characteristics, this transistor may be utilised as a switch in various electrical circuits to drive various loads with currents less than 5A. This transistor’s application circuits primarily comprise a battery charger, power supply, motor driving, and so on. This transistor may also function…
The base current for TIP127 transistor is about 120mA and the Emitter base voltage is 5V. TIP127 can switch loads up to 60V with a peak current of 8A and a continuous current of 5A. This makes it suitable for medium and high-power electronics like controlling motors, solenoids, or high-power LEDs. Specifications Type PNP Darlington…
TIP31C is an NPN-type Power Transistor. It has a gain value of 50 and a collector current of 3A. TIP31C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector…
Its TIP32C PNP Bipolar Power Transistor 100V 3A TO-220. TIP32C is a silicon Epitaxial-base PNP power transistor packaged in a Jedec TO-220 plastic packaging. It’s designed for medium-power linear and switching applications. TIP31C is the complementary NPN type. Specifications: Type PNP Transistor Collector-Emitter Voltage 40 VDC Collector-Base Voltage 40 VDC Continuous Collector Current 3 ADC Continuous…
The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. Its used in Switching applications Like in general switching, snubber circuits, clamp, Inverter and many other circuits. Specifications Part Number TIP42C Type PNP Transistor Collector-Emitter Voltage 40V DC Collector-Base Voltage 40V DC Continuous Collector…
2SC5858 is a triple diffused mesa type high power transistor, generally used in horizontal deflection output for HDTV, Digital TV, Projection TV. Datasheet Features High voltage Low saturation voltage High speed Specifications Model 2SC5858 Brand TOSHIBA Make JAPAN Transistor Type NPN (BJT) Material of Transistor Si Collector-Base Voltage (VCBO) 1700V Collector-Emitter Voltage (VCEO) 750V Emitter-Base…
TOSHIBA 2SC5859 is a high-power NPN transistor, The Transistor 2SC5859 is a high-power transistor with a collector current of 23A and collector to emitter voltage of 750V. It is used in Audio frequency amplifiers, AF /RF circuits, high current switching (up to 15A) loads, Push-Pull configuration circuits, and Low Slew rate devices, Can be used as…
TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A). It is a through-hole(THD) active component with three terminals: gate, collector, and emitter. It is a fourth-generation IGBT unit and It is often used in high-power switching applications. Datasheet Features FRD…
Insulated gate bipolar transistors or IGBTs are a form of a discrete semiconductor device that is generally used for power applications such as inverters, converters and power supplies. IGBT transistors have the advantage of combining many of the characteristics of MOSFETs and bipolar transistors, giving the high voltage and current handling capabilities of bipolar transistors…
The TTA1943 is a high power PNP transistor developed by Toshiba. It is often utilized in high power audio circuits or AF amplifiers due to its high current gain and collector current. The TTA1943 is a silicon through-hole transistor in a TO-3 package. Recommended for 100-W high-fidelity audio frequency amplifier output stage. Specifications Characteristics Symbol Rating …