Showing 17–32 of 49 results
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT…
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT…
IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor. The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although it was created to drive discrete…
IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor. The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although it was created to drive discrete…
The 11N120 is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT…
This Insulated Gate Bipolar Transistor (IGBT) has a sturdy and cost-effective Ultra Field Stop Trench construction. It provides excellent performance in demanding switching applications, with low on-state voltage and reduced switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A free-wheeling diode with a low forward voltage is also present. Fairchild’s…
Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching…
Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Datasheet Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching…
The Fairchild Power Switch FS7M-series is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The…
The Fairchild Power Switch FS7M-series is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The…
Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching applications such as solar inverter, UPS, welder and PFC applications. Datasheet Features FS Trench Technology, Positive Temperature Coefficient High-Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A…
Using novel field stop IGBT technology, ON Semiconductor’s /Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Coefficient for Easy Parallel Operating High Current Capability Low Saturation…
The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features SOA and Switching Applications Information Standard TO−220 These Devices are Pb−Free and are RoHS Compliant*…
RJP4007 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlights of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4007ANS Brand Renesas Package VSON-8…
RJP4007 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlights of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4007ANS Brand Renesas Package VSON-8…