Showing 1–16 of 49 results
13007A STMicroelectronics is an NPN Switching Transistor designed for high voltage, high speed, power switching in an inductive circuit. The MJE13007A is a silicon multi-epitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are frequently used in motor control, switching regulators, and other applications. Datasheet Features High Current capacity High-speed switching Wide SOA Applications…
20N60S5 is a power transistor. As we know that power transistors are used for power switching. A three-terminal device known as a power transistor is made of semiconductor materials. It has collector, base, and emitter terminals. This component is specially made to handle high current-voltage ratings. Regular transistors are usually used for amplifying and switching…
The BD139 is a NPN complementary low voltage NPN transistor in 3 pin Its package is TO-126. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. Specifications: Type Medium Power NPN transistor Maximum collector power dissipation (Pc) 12 W Maximum collector-base voltage Vcb 80 V Maximum emitter-base voltage 5 V Maximum collector…
The BD140 is a medium power bipolar junction PNP transistor that is mostly utilised in complementary or quasi-complementary circuits in audio amplifiers and drivers. Its mounting style is through hole and the package is To-126. Specifications: Type Medium Power PNP transistor Maximum collector power dissipation (Pc) 12 W Maximum collector-base voltage Vcb 80 V Maximum emitter-base…
BU508A is an NPN triple diffused silicon power transistor. The Collector current ‘Ic’ is a function of the base current ‘Ib’, a variation in base current gives a corresponding amplified variation in the collector current for a given collector-emitter voltage ‘Vce’. It is specifically designed for use in large screen color deflection circuits. Specifications Model …
D718 is a triple diffused epitaxial silicon NPN transistor. It is often used in high-power amplifier applications. It is recommended for the 45~50W Audio frequency amplifier output stage. Datasheet Features Recommended for 45~50W Audio frequency amplifier Output Stage Complementary to KTB688 Specifications Model D718 Brand Korea Electronic Polarity Type NPN Collector-Base Voltage (VCBO) 120V Collector-Emitter…
FAIRCHILD C2073 is a silicon NPN power transistor. It is a Through-hole(THD) active component that consists of three terminals Base, Collector, and Emitter. Datasheet Features TV vertical Deflection Output Complement to KSA940 Collector-Base Voltage VCBO = 150V Specifications Model C2073 Brand FAIRCHILD Type NPN Collector-Base Voltage (VCBO) 150V Collector-Emitter voltage (VCEO) 150V Emitter-Base Voltage (VEBO)…
The 25N120 is a high voltage, high current IGBT that can switch up to 1200V and 50A. It is made using NPT (Non-Punch Through) trench technology, which results in very low switching loss and low saturation voltage, making it suitable for use in low voltage switching driver designs and achieving comparatively high efficiency for its…
G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and minimal minority-carrier recombination that makes it an excellent option for resonant mode switching as well (up to >300 K Hz) Datasheet Features Designed expressly for switch-mode…
The IR MOSFET family of power MOSFETs utilises proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. The devices are available in various surface-mount and through-hole packages with industry-standard footprints for ease of design. Features Planar cell structure…
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. The devices are available in various surface-mount and through-hole packages with industry-standard footprints for ease of design. Features Planar cell structure…
It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the features of an IGBT and an ultrafast recovery diode into a single device, making them ideal for a variety of high-voltage, high-current, motor control, UPS, and…
It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the features of an IGBT and an ultrafast recovery diode into a single device, making them ideal for a variety of high-voltage, high-current, motor control, UPS, and…
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…