Showing 129–144 of 205 results
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT…
K4202 is an N channel MOSFET which is basically used for switching applications its an electronic switch where we have no need of manual touch for switching its junction temperature is 175 degree centigrade its package is TO-220AB. There is the wide application of this device its used in power switching circuit, its used in…
A Link Switch-HP device monolithically integrates a controller and high-voltage power MOSFET into one package.. It contains a newly created analogue control system that provides primary-side regulated (PSR), continuous conduction mode (CCM), power supply up to 90 W without the efficiency restriction of DCM or audible noise. With the ability to operate in several modes,…
A LinkSwitch-HP device monolithically integrates a controller and high-voltage power MOSFET into one package.. It contains a newly created analogue control system that provides primary-side regulated (PSR), continuous conduction mode (CCM), power supply up to 90 W without the efficiency restriction of DCM or audible noise. With the ability to operate in several modes, it…
LTTH806SD is a fast recovery diode; it’s used for fast switching operations, it has a fast recovery time, and this feature makes it too fast to operate as a switch. It’s an electronic switch there is no need for any mechanical movement for switching it operates with the help of an electric signal. Features: General…
IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor. The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although it was created to drive discrete…
IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor. The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although it was created to drive discrete…
These N-channel MOSFETs are created using cutting-edge Magna Chip MOSFET Technology, which offers exceptional quality, strong switching performance, and low on state resistance. These devices are appropriate for general-purpose, high-speed switching, and SMPS applications. This drain current is 7.0 A its mostly used in switching operation wherever we need of fast switching there we can…
The MJE13005A is a high-speed NPN transistor with a high voltage. With a collector-emitter voltage of 400V and a continuous collector current of 4A. The Transistor has a very low fall time making it suitable for switching AC voltage (115V/220V) for converter and inverter applications. Features: Its collector emitter voltage is 400V Its DC current…
MJE15033 is a complementary silicon MOSFET which is used as an electronic switch. It’s a switching device which is used to switch the power. There are many applications of this MOSFET like SMPS, UPS, Inverter, Welder and other switching applications. Its max operating voltage is 250V, and the current is 8A. Features DC Current Gain…
The MSF8N80 is an N-channel enhancement-mode MOSFET that provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The majority of electrons are found in the N-Channel, and their movement in the channel is responsible for the flow of current in the transistor. The ITO-220AB package is widely…
The 11N120 is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT…
2N6027 Programmable Unijunction Transistor 40V 300mW is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. The application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode…
This Insulated Gate Bipolar Transistor (IGBT) has a sturdy and cost-effective Ultra Field Stop Trench construction. It provides excellent performance in demanding switching applications, with low on-state voltage and reduced switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A free-wheeling diode with a low forward voltage is also present. Fairchild’s…
Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching…
Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Datasheet Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching…