Showing 113–128 of 205 results
It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the features of an IGBT and an ultrafast recovery diode into a single device, making them ideal for a variety of high-voltage, high-current, motor control, UPS, and…
IRGPC50U is an IGBT MOSFET which is mostly known for its ultrafast feature. Its operating current is 27A, and the voltage is 600V. It has a soft recovery time just because of this feature; it performs fast switching operations. Its primarily used in SMPS, UPS, inverters and other general switching applications. Features: Fast Switching Speed…
IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. IRF Mosfets need…
The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications. The ISL83202, which is optimized for PWM motor control and uninterruptible power supply systems, offers simple and flexible bridge-based design. The ISL83202 is excellent for switching…
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…
IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It’s used to switch the power in circuitry. It’s used to protect the circuit from high power too. Its drain-source voltage is 250V. Its drain current is 25A. It’s a space-saving device and easy to mount. DATASHEET Applications: SMPS UPS…
IXYS IXFX44N80P is a three-terminal N-Channel Power MOSFET, It features an avalanche-rated and fast intrinsic diode. Its Voltage rating is 800V, its Current rating is 44A and its Driving voltage is 10V. Advantages: Easy to Mount Space Saving High Power Density Features: International Standard Packages Fast Intrinsic Diode Avalanche Rated Low Package Inductance Datasheet Specification Model…
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…
The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…
The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT…