Showing 113–128 of 205 results

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    IRG4PC50FD 600V 70A IGBT Power Transistor TO-247

    184.00

    It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the features of an IGBT and an ultrafast recovery diode into a single device, making them ideal for a variety of high-voltage, high-current, motor control, UPS, and…

  • IRGPC50U IGBT MOSFET

    244.00

    IRGPC50U is an IGBT MOSFET which is mostly known for its ultrafast feature.  Its operating current is 27A, and the voltage is 600V. It has a soft recovery time just because of this feature; it performs fast switching operations. Its primarily used in  SMPS, UPS, inverters and other general switching applications. Features: Fast Switching Speed…

  • IRL520 N-channel 100V 10A Mosfet

    34.00

    IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. IRF Mosfets need…

  • ISL83202 55V , 1A Peak Current H-Bridge FET Driver IC

    244.26

    The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications. The ISL83202, which is optimized for PWM motor control and uninterruptible power supply systems, offers simple and flexible bridge-based design. The ISL83202 is excellent for switching…

  • IXBH5N160G 1600V , 5A Monolithic Bipolar MOS Transistor

    245.00

    It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…

  • IXBH5N160G 1600V , 5A Monolithic Bipolar MOS Transistor

    284.97

    It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB – TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode…

  • IXTQ82N25P Power MOSFET

    180.00

    IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It’s used to switch the power in circuitry. It’s used to protect the circuit from high power too. Its drain-source voltage is 250V. Its drain current is 25A. It’s a space-saving device and easy to mount. DATASHEET Applications: SMPS UPS…

  • IXYS 44N80P 800V 44A N-Channel Power MOSFET

    421.00

    IXYS IXFX44N80P is a three-terminal N-Channel Power MOSFET, It features an avalanche-rated and fast intrinsic diode.  Its Voltage rating is 800V, its Current rating is 44A and its Driving voltage is 10V. Advantages: Easy to Mount Space Saving High Power Density Features: International Standard Packages Fast Intrinsic Diode Avalanche Rated Low Package Inductance Datasheet Specification Model…

  • IXYS GP70N33 330V 70A Medium Frequency IGBT

    223.91

    IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…

  • IXYS GP70N33 330V 70A Medium Frequency IGBT

    231.00

    IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for…

  • IXYS IXFH20N100 1000V 20A N-Channel MOSFET TO-247 Package

    189.98

    The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…

  • IXYS IXFH20N100 1000V 20A N-Channel MOSFET TO-247 Package

    204.00

    The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…

  • IXYS IXFH20N100 1000V 20A N-Channel MOSFET TO-247 Package

    16.00

    The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications. Features: Fast recovery diode High power density Easy to mount for Printed Circuit Boards…

  • IXYS IXFH90N30 300V 90A N-Channel MOSFET TO-247 Package

    189.98

    The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…

  • IXYS IXFH90N30 300V 90A N-Channel MOSFET TO-247 Package

    239.00

    The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…

  • K120T60 IGBT Transistor 600V , 120A

    305.33

    K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT…