Showing 81–96 of 205 results
Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50 W, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220’s low heat resistance and low packaging cost contribute to its widespread…
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Features Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully…
The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Features Improved gate, avalanche and dynamic dv/dt ruggedness Fully…
The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Features Improved gate, avalanche and dynamic dv/dt ruggedness Fully…
The IRFB7545PBF is an N-channel HEXFET Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It is appropriate for battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and so on. Features Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode…
The IRFB7545PBF is an N-channel HEXFET Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It is appropriate for battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and so on. Features Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterised capacitance and avalanche SOA Enhanced body diode…
The IR MOSFET family of power MOSFETs utilises proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. The devices are available in various surface-mount and through-hole packages with industry-standard footprints for ease of design. Features Planar cell structure…
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. The devices are available in various surface-mount and through-hole packages with industry-standard footprints for ease of design. Features Planar cell structure…
IRF530N is an N Channel Power MOSFET which is used to switch the power in power supply circuits, It has designed by the International rectifier. It has three terminal basically gate drain and source, here the gate is working as a gateway means it will allow to pass the electrons from the source, and drain…
IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Features It has 100% avalanche rated It has Fast switching system Ease of paralleling New high…
IRF640 is a type of power MOSFET. It’s also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device. It’s used to switch the power that’s why it’s known as the power-switching MOSFET. Its drain-source voltage is 200V. And its drain current is 18A. Features…
IRF640A is a type of power MOSFET. It’s also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device. It’s used to switch the power that’s why it’s known as the power-switching MOSFET. Its drain-source voltage is 200V. And its drain current is 18A. DATASHEET…
An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility…
An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility…
IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for…
These IRFF9Z34N Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide…