Showing 65–80 of 205 results
FDA69N30 is a type of MOSFET which is basically designed by the use of DMOS technology its used in switching applications its operating voltage is 300V and the current is 59A. its used for high switching applications like in SMPS( switch mode power supply) and in UPS ( Uninterrupted power supply) This MOSFET is designed…
The 25N120 is a high voltage, high current IGBT that can switch up to 1200V and 50A. It is made using NPT (Non-Punch Through) trench technology, which results in very low switching loss and low saturation voltage, making it suitable for use in low voltage switching driver designs and achieving comparatively high efficiency for its…
FQA24N50 is an N-Channel enhancement mode MOSFET which is basically used in switching applications, Its operating voltage is 500V its mostly used for high switching application and power switching, SMPS, UPS and other switching applications its package is TO-3P its designed by Fairchild. Its forward current is 5A and low gate charge is typically 90nC….
FQA24N60 is a N-Channel Enhancement mode metal oxide field effect transistor its basically used for switching purpose its used for high switching and power switching applications, Its operating voltage is 600V, its forward current is 23.5A, it provides superior switching performance that is why its mostly used in switching applications like in SMPS, UPS, Power…
The proprietary planar stripe and DMOS technology of Fairchild Semiconductor is used to manufacture this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically tailored to provide superior switching performance, high avalanche energy strength, and lower on-state resistance. Switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts can…
This N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These gadgets are appropriate for applications requiring variable switching power, DC motor control, and switched-mode power sources. Features: 70 A, 100 V, RDS(on) = 23 mΩ…
FQP10N80C is an N channel MOSFET which is basically used for fast switching operation its maximum operating voltage is 800V. These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary, planar stripe, DMOS technology developed by Fairchild. With this cutting-edge technology, high energy pulses can be withstood in the avalanche and commutation…
FQPF4N80 2A,800V N-CHANNEL enhancement mode power field effect transistors were created the exclusive planar stripe DMOS process developed by Fairchild.In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. The high efficiency switch mode power supply is ideal for these…
FQPF8N80C is a type of N- channel MOSFET its used in fast switching operation its maximum operating voltage is 800V. This component is best for high efficiency switch mode power supplies. Its maximum lead temperature for soldering purpose is 300 °C. Its reverse recovery time is 690nS that is why it mostly used in fast switching operations….
G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V. Applications Telecommunications – Server and telecom power supplies Lighting – High-intensity discharge (HID) – Light emitting diodes…
G4PC50U is an IGBT MOSFET which is mostly known for its ultrafast feature.¬† Its operating current is 27A, and the voltage is 600V. It has a soft recovery time just because of this feature; it performs fast switching operations. Its primarily used in¬† SMPS, UPS, inverters and other general switching applications. Features: Fast Switching Speed…
G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and minimal minority-carrier recombination that makes it an excellent option for resonant mode switching as well (up to >300 K Hz) Datasheet Features Designed expressly for switch-mode…
This GP4063D is an INSULATED BIPOLAR GATE TRANSISTOR MOSFET. GP4063D is a type of MOSFET which has three terminal emitters, a collector and a gate. It’s used as an electronic switch; It is suitable for high voltage, high current and fast switching. Its also known as an insulated bipolar gate transistor. by using this transistor…
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Features New revolutionary high voltage technology Worldwide best RDS(on) in…
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics. Features New revolutionary high voltage technology Ultra-low gate charge Periodic…
Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50 W, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220’s low heat resistance and low packaging cost contribute to its widespread…