Showing 49–64 of 205 results
This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications. Features： 1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V 2) Low gate charge 3) Green device available 4) Advanced high cell density trench technology for ultra RDS(ON) 5) Excellent…
DOD15N03 N-Channel Power MOSFET by Doingter is used for Fast Switching and Simple Drive Requirements. Features include Low Gate Charge and RoHS Compliant. Drain Source Voltage is 30V, and Gate Source Voltage is ±20V. It can be used in various low voltage applications. Features: Low Gate Charge Simple Drive Requirement Fast Switching RoHS Compliant Specification Model DOD15N03…
DOD15N03 N-Channel Power MOSFET by Doingter is used for Fast Switching and Simple Drive Requirements. Features include Low Gate Charge and RoHS Compliant. Drain Source Voltage is 30V, and Gate Source Voltage is ±20V. It can be used in various low voltage applications. Features: Low Gate Charge Simple Drive Requirement Fast Switching RoHS Compliant Specification Model DOD15N03…
This N-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications. Features： 1) VDS=60V, ID=50A, RDS(ON)<17mΩ @VGS=10V 2) Low gate charge 3) Green device available 4) Advanced high cell density trench technology for ultra RDS(ON) 5) Excellent…
This N-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications Features： 1) VDS=60V, ID=50A, RDS(ON)<17mΩ @VGS=10V 2) Low gate charge 3) Green device available 4) Advanced high cell density trench technology for ultra RDS(ON) 5) Excellent…
This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications. Features： 1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V 2) Low gate charge 3) Green device available 4) Advanced high cell density trench technology for ultra RDS(ON) 5) Excellent…
20N50 is an N- Channel MOSFET. It’s a three-terminal silicon device, and the current capability is 20A it is used in fast switching operations its breakdown voltage rating is 500V, and the threshold voltage is 5V. They are intended for motor control circuits, UPS, switched-mode power supplies, DC-to-DC converters, and general switching applications. The Nell 20N50…
BF245C is a general purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. It is primarily made to be used as an audio frequency amplifier and as an amplifier in the VHF and UHF frequency bands. A very small and low gain signal (RF, audio, or any other signal) can be amplified…
FAIRCHILD C2073 is a silicon NPN power transistor. It is a Through-hole(THD) active component that consists of three terminals Base, Collector, and Emitter. Datasheet Features TV vertical Deflection Output Complement to KSA940 Collector-Base Voltage VCBO = 150V Specifications Model C2073 Brand FAIRCHILD Type NPN Collector-Base Voltage (VCBO) 150V Collector-Emitter voltage (VCEO) 150V Emitter-Base Voltage (VEBO)…
A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. SuperFET II MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss,…
A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. SuperFET II MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction…
FAIRCHILD FDA28N50 is an N-Channel 500V, 28A MOSFET. It is a Through-hole(THD) active component which consists of three terminals Gate, Source, and Drain. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features RDS(on)= 0.122Ω( Typ.)@ VGS= 10V, ID= 14A Low Gate Charge (Typ. 80nC) Low Crss (Typ….
The SuperFET® II MOSFET is a new high voltage super-junction (SJ) MOSFET family from Fairchild Semiconductor that uses charge balance technology for exceptional low on-resistance and lower gate charge performance. This technology minimises conduction loss while switching performance, dv/dt rate and avalanche energy are all improved. As a result, SuperFET II MOSFET is ideal for…
The Super MOS® MOSFET is next-generation high voltage super-junction (SJ) technology. It differs from traditional SJ MOSFETs in that it uses a deep trench filling technique. Lowest R s p on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC,…
These N-Channel enhancement mode power field effect transistors are created using a proprietary planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction…
FDA59N30 is an N-Channel enhancement mode This N-Channel enhancement mode power field effect transistor is made utilizing a planar stripe, DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are…