Showing 193–205 of 205 results
Insulated gate bipolar transistors or IGBTs are a form of a discrete semiconductor device that is generally used for power applications such as inverters, converters and power supplies. IGBT transistors have the advantage of combining many of the characteristics of MOSFETs and bipolar transistors, giving the high voltage and current handling capabilities of bipolar transistors…
The TTA1943 is a high power PNP transistor developed by Toshiba. It is often utilized in high power audio circuits or AF amplifiers due to its high current gain and collector current. The TTA1943 is a silicon through-hole transistor in a TO-3 package. Recommended for 100-W high-fidelity audio frequency amplifier output stage. Specifications Characteristics Symbol Rating …
The TTC5200 is a high power NPN transistor developed by Toshiba. It is often utilized in high power audio circuits or AF amplifiers due to its high current gain and collector current. The TTC5200 is a silicon through-hole transistor. Recommended for 100-W high-fidelity audio frequency amplifier output stage. Specifications Characteristics Symbol Rating collector-base voltage VCBO…
This line of integrated circuit voltage regulators with fixed voltage is made for various uses. Among these uses is on-card regulation, which reduces noise and the distribution issues brought on by single-point regulation. These regulators each have an output current capacity of 1.5 A. These regulators are impervious to overload because of their inbuilt current-limiting…
The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger, oscillator and pulse circuits, etc Features Low Forward Voltage Low Offset Voltage…
The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger, oscillator and pulse circuits, etc Features Low Forward Voltage Low Offset Voltage…
The UTC8N80 is an N-channel mode power MOSFET that offers customers DMOS and planar stripe technology by utilising UTC’s cutting-edge technology. This innovation permits a minimum enhanced switching performance with low on-state resistance. It can also tolerate large energy pulses in the avalanche and commutation modes.Typically, a high-efficiency switch mode power supply uses the UTC…
Vishay’s third-generation Power MOSFETs offer the optimum combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater…
Vishay’s SI2301 is a P Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a 1.5 to 2.3A Drain Current. Specification Model SI2301 Brand VISHAY Drain-Source Voltage (VDS) 20V Gate-Source Voltage…
Vishay’s SI2301 is a P Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a 1.5 to 2.3A Drain Current. Specification Model SI2301 Brand VISHAY Drain-Source Voltage (VDS) -20V Gate-Source Voltage…
Vishay’s SI2302 is an N Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a Drain Current of 2.2 to 2.8 A. Download Datasheet Specification Model SI2302 Brand VISHAY Drain-Source Voltage…
Vishay’s SI2302 is an N Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a Drain Current of 2.2 to 2.8 A. Datasheet Specification Model SI2302 Brand VISHAY Drain-Source Voltage 20V…
WML11N65C2 Super Junction Power MOSFET In the N layer of J-MOS, there is a P layer that is fashioned like a pillar. Alternating layers of P and N are aligned. Applying VDS causes the depletion layer to spread in the N-layer, but in SJ-MOS it does so differently than in regular D-MOS. (See illustrations of…