Showing 177–192 of 205 results
STP55NF06 power MOSFETs have been developed using STMicroelectronics’ unique ‘Single Feature Size’ strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics that make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters…
STP55NF06 power MOSFETs have been developed using STMicroelectronics’ unique ‘Single Feature Size’ strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics that make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters…
SW20N65C is a power MOSFET it has designed by using the advanced power MOSFET designing technology. Its basically designed has to used in power supply switching circuits, As its name is showing that this MOSFET will manage the power or control the power. Power MOSFET is a type of metal oxide semiconductor field-effect transistor used to switch…
Its TIP122 NPN Power Darlington Transistor 100V 5A TO-220 Package, Based on its characteristics, this transistor may be utilised as a switch in various electrical circuits to drive various loads with currents less than 5A. This transistor’s application circuits primarily comprise a battery charger, power supply, motor driving, and so on. This transistor may also function…
The base current for TIP127 transistor is about 120mA and the Emitter base voltage is 5V. TIP127 can switch loads up to 60V with a peak current of 8A and a continuous current of 5A. This makes it suitable for medium and high-power electronics like controlling motors, solenoids, or high-power LEDs. Specifications Type PNP Darlington…
TIP31C is an NPN-type Power Transistor. It has a gain value of 50 and a collector current of 3A. TIP31C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector…
Its TIP32C PNP Bipolar Power Transistor 100V 3A TO-220. TIP32C is a silicon Epitaxial-base PNP power transistor packaged in a Jedec TO-220 plastic packaging. It’s designed for medium-power linear and switching applications. TIP31C is the complementary NPN type. Specifications: Type PNP Transistor Collector-Emitter Voltage 40 VDC Collector-Base Voltage 40 VDC Continuous Collector Current 3 ADC Continuous…
The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. Its used in Switching applications Like in general switching, snubber circuits, clamp, Inverter and many other circuits. Specifications Part Number TIP42C Type PNP Transistor Collector-Emitter Voltage 40V DC Collector-Base Voltage 40V DC Continuous Collector…
TK12A600 is a N-Channel MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. Features Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA…
TOP Switch-GX uses the same proven topology as TOPSwitch, cost-effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry onto a single CMOS chip. Many new features have been included to lower system costs while also improving design flexibility, performance, and energy efficiency. It has the following transparent characteristics: Soft start,…
2SC5858 is a triple diffused mesa type high power transistor, generally used in horizontal deflection output for HDTV, Digital TV, Projection TV. Datasheet Features High voltage Low saturation voltage High speed Specifications Model 2SC5858 Brand TOSHIBA Make JAPAN Transistor Type NPN (BJT) Material of Transistor Si Collector-Base Voltage (VCBO) 1700V Collector-Emitter Voltage (VCEO) 750V Emitter-Base…
TOSHIBA 2SC5859 is a high-power NPN transistor, The Transistor 2SC5859 is a high-power transistor with a collector current of 23A and collector to emitter voltage of 750V. It is used in Audio frequency amplifiers, AF /RF circuits, high current switching (up to 15A) loads, Push-Pull configuration circuits, and Low Slew rate devices, Can be used as…
2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions…
2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions…
TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A). It is a through-hole(THD) active component with three terminals: gate, collector, and emitter. It is a fourth-generation IGBT unit and It is often used in high-power switching applications. Datasheet Features FRD…
The K2611 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode power supply applications. Features: High power density Easy to mount, ideal for Printed Circuit Boards,…