Showing 161–176 of 205 results
RJP4007 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlights of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4007ANS Brand Renesas Package VSON-8…
RJP4007 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlights of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4007ANS Brand Renesas Package VSON-8…
RJP4009 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlight of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4009ANS Brand Renesas Package VSON-8…
RJP4009 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlight of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM = 400 μF• Drive voltage: 2.5 V to 6 V (MAX)• Pb-free• Halogen-free Specifications Model RJP4009ANS Brand Renesas Package VSON-8…
S7N80A is an N-Channel Power MOSFET. A power MOSFET is used in the power circuit to switch the power. It’s used for high power; it’s used in SMPS, UPS, Inverter, Snubber, welder and other general switching applications. Its Drain Current is 4A at 25 degrees centigrade. Features: Its drain current is 4A Its drain-source voltage…
The NPN transistor consists of two n-type semiconductors that sandwich a p-type semiconductor. Here, electrons are the majority charge carriers, while holes are the minority charge carriers. Its package is SOT-23, its mounting style is SMD. Features Its used in portable radios Its mounting style is SMD Its Continuous Collector Current 500mA Specifications: Transistor Type NPN Package…
S8050 is a low voltage and high current transistor. It is a general-purpose PNP transistor designed for audio amplification and class B push-pull application. The collector current Ic is a function of the base current Ib for a given collector-emitter voltage VCE, and a change in the base current gives a corresponding amplified change in the…
It’s PNP transistor, The PNP transistor is a type of transistor in which one n-type material is doped with two p-type materials. It is a device that is controlled by the current. Both the emitter and collector currents were controlled by the small amount of base current. Features Its used in portable radios Its mounting style is…
S8550 is a low voltage and high current transistor. It is a general-purpose PNP transistor designed for audio amplification and class B push-pull application. The collector current Ic is a function of the base current Ib for a given collector-emitter voltage VCE, and a change in the base current gives a corresponding amplified change in the…
Vishay’s SI2301 is a P Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has ±8 VDC Gate to Source Voltage and a Drain Current of 1.5 to 2.3 A. Features: Its P-Channel MOSFET Its used in Switching application Its…
Vishay’s SI2302 is an N Channel Mosfet in a SOT-23 package. It’s a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to Source Voltage and a Drain Current of 2.2 to 2.8 A. Datasheet Features: Its N-Channel MOSFET Its SOT-23 Its SMD…
The SL80F040 is a Fast Recovery Diode. This soft recovery diode is three pins diode with a TO-3P Package. The Repetitive Reverse Voltage is 400V, and the Continuous Forward Current Per Diode ( TC=100 ℃) is 40A. Features 400V,80A Soft Recovery Operation Temperature ＜150℃ Planar Construction Applications Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and…
The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It isintended for power switching circuits and general-purpose amplifiers. The complementary. Datasheet Features Complementary to the MJE3055T Well-controlled hFE parameter for increased reliability Specifications Model MJE2955T Brand STMicroelectronics Material Silicon Polarity PNP Max. Collector power Dissipation 75W Max. Collector-Base Voltage 70V Max. Collector-Emitter Voltage 60V…
The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It isintended for power switching circuits and general-purpose amplifiers. The complementary Datasheet Features Complementary to the MJE3055T Well-controlled hFE parameter for increased reliability Specifications Model MJE2955T Brand STMicroelectronics Material Silicon Polarity PNP Max. Collector power Dissipation 75W Max. Collector-Base Voltage 70V Max. Collector-Emitter Voltage 60V…
The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is for power switching circuits intended for general-purpose amplifiers. The complementary PNP type is MJE2955T. Features: DC Current Gain Specified to 10 Amperes High Current Gain — Bandwidth Product —fT = 2.0 MHz (Min) @ IC = 500 mAdc Specifications Model MJE3055T…
The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is for power switching circuits intended for general-purpose amplifiers. The complementary PNP type is MJE2955T. Features: DC Current Gain Specified to 10 Amperes High Current Gain — Bandwidth Product —fT = 2.0 MHz (Min) @ IC = 500 mAdc Specifications Model MJE3055T…