Showing 145–160 of 205 results
The Fairchild Power Switch FS7M-series is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The…
The Fairchild Power Switch FS7M-series is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The…
Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching applications such as solar inverter, UPS, welder and PFC applications. Datasheet Features FS Trench Technology, Positive Temperature Coefficient High-Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A…
Using novel field stop IGBT technology, ON Semiconductor’s /Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Coefficient for Easy Parallel Operating High Current Capability Low Saturation…
The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features SOA and Switching Applications Information Standard TO−220 These Devices are Pb−Free and are RoHS Compliant*…
ST’s well-known strip-based PowerMESHTM layout is highly optimised to create the SuperMESHTM series. Besides significantly reducing on-resistance, extra care is taken to guarantee excellent dv/dt capability for the most demanding applications. Such a series completes ST’s high-voltage MOSFETs, including the ground-breaking MDmeshTM devices. Applications: It’s used for high current It’s used for high-switching applications It’s…
The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications. However, a driver circuit is needed if the MOSFET has to be switched…
P75NF758 is an N channel power MOSFET its maximum operating voltage is 75V and the forward current is 80A.This Power MOSFET series was created using STMicroelectronics’ exclusive S Trip FET process, and it was specifically created to reduce gate charge and input capacitance. In modern, high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications,…
P80NF55 power MOSFETs were created utilising STMicroelectronics’ proprietary STripFET technology, which is especially engineered to decrease input capacitance and gate charge. As a result, the devices are suited for usage as the main switch in sophisticated high-efficiency isolated DCDC converters for telecom and computer applications, as well as applications with low gate charge driving requirements….
This Power MOSFET is the most recent improvement of STMicroelectronics’ distinctive strip-based ‘single feature size’ technique. The resultant transistor has outstanding manufacturing reproducibility because of its rugged avalanche features, extremely high packing density for low on-resistance, and minimally critical alignment stages. DATASHEET Features Low Power Loss High-Efficiency High Current Capability Low Forward Voltage Drop Avalanche…
PHP34NQ11T is an N-Channel enhancement MOSFET. It’s used in switching applications. It’s an electronic switch. Wherever we do not need a mechanical switch, we use this switch because it performs its switching operation by electricity instead of mechanical movement. Its package is TO-220AB. Features Low on State resistance It has a low thermal resistance It’s…
PMBT2222A is an NPN switching transistor in a small SOT23 (TO-236AB) Surface-mounted Device (SMD) plastic package. Generally used for switching and linear amplification. Features High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Specifications Part Number PMBT2222A Manufacturer Nexperia Package / Case SOT-23-3 Collector- Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO…
PMBT3904 is a general-purpose semiconductor device that may be used to amplify, switch, or control a signal or power. Because the PMBT3904 is an NPN transistor, we must apply a little amount of positive voltage to the transistor’s base via a current limiting resistor known as an RB (Base Resistor). When the proper amount of current passes…
R30120G2¬†This device is designed to be used as a boost or free-wheeling diode in power supply and other power-switching applications. The short ta phase and low IRR minimize loss in switching transistors. The smooth recovery reduces ringing and increases the range of operating conditions for the diode without the need for extra snubber circuitry. For…
2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than that of the general transistor. The Drain and Source are connected when a signal is applied to the Gate terminal, as with most of the MOSFETs….
2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than that of the general transistor. The Drain and Source are connected when a signal is applied to the Gate terminal, as with most of the MOSFETs….