20N60A4D MOSFET

Description

A high voltage switching device with MOS gate that combines the finest qualities of MOSFETs and bipolar transistors is called 20N60A4D. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25 and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The IGBT being used is a TA49339 development type. The development type TA49372 diode is utilized in anti-parallel. It has designed by Fairchild. This IGBT is perfect for a variety of high voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget is designed to work with high frequency switch mode power supply.

Features

1. >100 kHz Operation 390 V, 20 A
2. 200 kHz Operation 390 V, 12 A
3. 600 V Switching SOA Capability
4. Typical Fall Time 55 ns at TJ= 125°C
5. Low Conduction Loss
6. Its a lead free device

Applications

• Fast switching operations
• UPS
• SMPS

Pinout:-

1: Gate, 2: Collector, 3: Emitter

Specification