ONSEMI FGH60N60SMD 600V 120A N-Channel IGBT
₹289.00
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Description
Using novel field stop IGBT technology, ON Semiconductor’s /Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
- High Input Impedance
- Fast Switching: EOFF = 7.5 uJ/A
- Tightened Parameter Distribution
- This Device is Pb−Free and is RoHS Compliant
Applications
- Solar Inverter, UPS, Welder, PFC, Telecom, ESS
Specifications
| Model | FGH60N60SMD |
| Brand | FSC/ONSEMI |
| Technology | Field Stop |
| Channel Type | N |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Collector-Emitter Voltage | 600V |
| Typical Collector-Emitter Saturation Voltage | 1.8V |
| Maximum Continuous Collector Current | 120A |
| Maximum Gate Emitter Leakage Current | 0.4µA |
| Maximum Power Dissipation | 600000mW |
| Operating Temperature | -55°C to 175°C |
| Supplier Package | TO-247 |
| Pin Count | 3 |
| Country of Origin | China |